Semiconductor device with different fin pitches

摘要

A method for forming a semiconductor device includes forming a first fin and a second fin on a substrate, the first fin arranged in parallel with the second fin, the first fin arranged a first distance from the second fin, the first fin and the second fin extending from a first source/drain region through a channel region and into a second source/drain region on the substrate. The method further includes forming a third fin on the substrate, the third fin arranged in parallel with the first fin and between the first fin and the second fin, the third fin arranged a second distance from the first fin, the second distance is less than the first distance, the third fin having two distal ends arranged in the first source/drain region. A gate stack is formed over the first fin and the second fin.

主权项

1. A method for forming a semiconductor device, the method comprising:
forming a mandrel on a substrate; forming sacrificial sidewall spacers along sidewalls of the mandrel; removing the mandrel; removing portions of the substrate to form an arrangement of fins on the substrate, the arrangement of fins including:
a first fin arranged substantially in parallel with a second fin in a source/drain region, the first fin arranged a first distance from the second fin; anda third fin arranged substantially in parallel with a fourth fin in a channel region, the third fin arranged a second distance from the fourth fin, the second distance is greater than the first distance; removing the sacrificial sidewall spacers; and forming a gate stack over the channel region.