Methods of forming ruthenium conductive structures in a metallization layer

摘要

One illustrative method disclosed herein includes, among other things, forming a first conductive structure and a second conductive structure that is conductively coupled to the first conductive structure. In this example, forming the second conductive structure includes forming a ruthenium cap layer on and in contact with an upper surface of the first conductive structure, with the ruthenium cap layer in position, forming a liner layer comprising manganese on and in contact with at least the surfaces of the second layer of insulating material, wherein an upper surface of the ruthenium cap layer is substantially free of the liner layer, and forming a bulk ruthenium material on and in contact with the liner layer, wherein a bottom surface of the bulk ruthenium material contacts the upper surface of the ruthenium cap layer.

主权项

1. A method, comprising:
forming a first conductive structure in a first layer of insulating material, said first conductive structure comprising an oxidizable metal material; and forming a second conductive structure that is conductively coupled to said first conductive structure, wherein at least a portion of said second conductive structure is positioned in a first opening in a second layer of insulating material comprising a carbon and oxygen-containing insulating material, wherein forming said second conductive structure comprises:
forming a ruthenium cap layer on and in contact with an upper surface of said first conductive structure;with said ruthenium cap layer in position, forming a liner layer comprising manganese on and in contact with at least surfaces of said second layer of insulating material defined by said first opening, wherein an upper surface of said ruthenium cap layer is substantially free of said liner layer; andforming a bulk ruthenium material on and in contact with said liner layer, wherein a bottom surface of said bulk ruthenium material contacts said upper surface of said ruthenium cap layer.