CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

摘要

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

主权项

1. A method, comprising:
forming, on a wafer, a complementary metal oxide semiconductor (CMOS) ultrasound transducer (CUT) device having a cavity, a membrane sealing the cavity, and processing circuitry; and forming an electrical contact on a bottom side of the membrane, the electrical contact physically contacting the bottom side of the membrane and connecting the membrane to the processing circuitry, the bottom side of the membrane proximal the cavity, and wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise substantially a same material.