| 发明名称 |
HIGH-VOLTAGE GALLIUM NITRIDE SCHOTTKY DIODE |
| 摘要 |
A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface. |
| 申请公布号 |
US2017062625(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615055791 |
申请日期 |
2016.02.29 |
| 申请人 |
STMicroelectronics (Tours) SAS |
发明人 |
Yvon Arnaud |
| 分类号 |
H01L29/872;H01L29/205;H01L27/08;H01L23/48;H01L27/02;H01L29/20;H01L29/417 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Schottky diode comprising, in the following order between a lower surface and an upper surface:
a doped silicon support; a non-doped silicon layer; a buffer layer; a non-doped GaN layer; and an AlGaN layer; and further including:
a first metallization extending through the AlGaN layer forming an ohmic contact;a second metallization on the AlGaN layer forming a Schottky contact;a first via extending from the first metallization towards the lower surface and passing through the non-doped GaN layer, the buffer layer and the non-doped silicon layer; anda second via extending from the second metallization towards the upper surface. |
| 地址 |
Tours FR |
