NANOCRYSTALINE DIAMOND CARBON FILM FOR 3D NAND HARDMASK APPLICATION

摘要

A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

主权项

1. A method for etching a device layer, the method comprising:
depositing a nanocrystalline diamond layer on a device layer; patterning and etching the nanocrystalline diamond layer; etching the device layer to form a channel, wherein the channel is formed in the device layer and in the nanocrystalline diamond layer; and removing the nanocrystalline diamond layer.