NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATION

摘要

A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

主权项

1. A nonvolatile memory device comprising:
a memory cell array including memory cells stacked in a direction perpendicular to a substrate, and a word line connected to plural memory cells among the memory cells of the memory cell array; a voltage generator configured to sequentially provide a first word line pre-charge voltage and a second word line pre-charge voltage to the word line during a read operation; and a control logic including a time control unit configured to determine a word line pre-charge time for the second pre-charge voltage for the word line by referring to a lookup table including word line pre-charge time information.