发明名称 MEMORY SYSTEM THAT HANDLES ACCESS TO BAD BLOCKS
摘要 A memory system includes a plurality of pins for connection to the outside of the memory system, one of the pins being configured to receive a command signal, a memory cell array including a plurality of first memory blocks and a second memory block in which status data indicating which of the first memory blocks is defective, is stored, and a control circuit configured to determine whether or not a first memory block targeted by the command signal is indicated as being defective in the status data. The control circuit allows an operation to be performed on the targeted first memory block in accordance with the command signal when the targeted first memory block is not indicated as being defective, and blocks the operation to be performed on the targeted first memory block when the targeted first memory block is indicated as being defective.
申请公布号 US2017062076(A1) 申请公布日期 2017.03.02
申请号 US201615062012 申请日期 2016.03.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TSUJI Nobuhiro;KADA Kenichirou;TAKEDA Shinya;KITAZUME Toshihiko;KODERA Shunsuke;IWATA Tetsuya;FURUYAMA Yoshio;NARAI Hirosuke
分类号 G11C29/38;G11C29/44;G06F3/06 主分类号 G11C29/38
代理机构 代理人
主权项 1. A memory system, comprising: a plurality of pins for connection to the outside of the memory system, the pins including a first pin configured to receive a chip select signal, a second pin configured to receive a clock signal, and a third pin configured to receive a command signal in synchronization with the clock signal; a memory cell array including a plurality of first memory blocks and a second memory block in which status data indicating whether or not each of the first memory blocks is defective is stored; and a control circuit configured to determine whether or not a first memory block targeted by the command signal is indicated as being defective in the status data, and allow an operation to be performed on the targeted first memory block in accordance with the command signal when the targeted first memory block is not indicated as being defective in the status data and block the operation to be performed on the targeted first memory block when the targeted first memory block is indicated as being defective in the status data.
地址 Tokyo JP