SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

主权项

1. A display device comprising:
a substrate; a pixel portion; a transistor in the pixel portion and on the substrate, the transistor comprising:
a gate electrode on the substrate;a gate insulating film comprising a first oxide insulating film over the gate electrode;an oxide semiconductor film on the gate insulating film and in contact with the first oxide insulating film;a source electrode and a drain electrode on the oxide semiconductor film;a second oxide insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film; anda nitride insulating film over the second oxide insulating film; an interlayer insulating film formed from an organic material over the nitride insulating film; and an electrode over the interlayer insulating film and electrically connected to the drain electrode through an opening formed in the interlayer insulating film, wherein side end surfaces of the source electrode and the drain electrode form steps, wherein portions of the second oxide insulating film covering the steps comprise void portions, and wherein the nitride insulating film covers the void portions of the second oxide insulating film.