OXIDE SEMICONDUCTOR, TRANSISTOR, AND SEMICONDUCTOR DEVICE

摘要

A novel oxide semiconductor is provided. An oxide semiconductor contains In, an element M (M represents Al, Ga, Y, or Sn), and Zn. The oxide semiconductor has little characteristics variation and structure change and has high electron mobility in the case where the atomic ratio of In to M and Zn in the oxide semiconductor ranges from 4:2:3 to 4:2:4.1 or is a neighborhood thereof.

主权项

1. An oxide semiconductor film comprising In, an element M, and Zn,
wherein the element M represents aluminum, gallium, yttrium, or tin, and wherein an atomic ratio of the In to the element M and the Zn in the oxide semiconductor film is (1+α):(1−α):β (where −1≦α≦1 and β is a positive real number) or a neighborhood thereof.