| 发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetic memory device includes a semiconductor substrate, an insulating region provided on the semiconductor substrate, an electrode plug provided in the insulating region, an amorphous conductive portion provided on the electrode plug and including a part provided in the insulating region, and a stacked structure provided on the amorphous conductive portion and including a magnetic layer. |
| 申请公布号 |
US2017062521(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615068107 |
申请日期 |
2016.03.11 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUMURA Yoshinori |
| 分类号 |
H01L27/22;H01L43/12;G11C11/16;H01L43/02;H01L43/08 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device comprising:
a semiconductor substrate; an insulating region provided on the semiconductor substrate; an electrode plug provided in the insulating region; an amorphous conductive portion provided on the electrode plug and including a part provided in the insulating region; and a stacked structure provided on the amorphous conductive portion and including a magnetic layer. |
| 地址 |
Tokyo JP |
