POWER GATE SWITCHING SYSTEM

摘要

A semiconductor device includes: a virtual power line extended in a first direction; an n-well extended in the first direction, wherein the virtual power line and the n-well are disposed in a row; a first power gate switch cell disposed in the n-well; a second power gate switch cell disposed in the n-well, wherein the first and second power gate switch cells are first type cells; and a third power gate switch cell disposed in the n-well between the first and second power gate switch cells, wherein the third power gate switch cell is a second type cell different from the first type cells.

主权项

1. A semiconductor device, comprising:
a virtual power line extended in a first direction; an n-well extended in the first direction, wherein the virtual power line and the n-well are disposed in a row; a first power gate cell disposed in the n-well; a second power gate cell disposed in the n-well, wherein the first and second power gate cells are first type cells; and a third power gate cell disposed in the n-well between the first and second power gate cells, wherein the third power gate cell is a second type cell different from the first type cells.