| 发明名称 |
ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD |
| 摘要 |
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber. |
| 申请公布号 |
US2017062235(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615347331 |
申请日期 |
2016.11.09 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Gon-Jun;Volynets Vladimir;An Sang-jin;Yang Hee-jeon;Lee Sangheon;Cho Sung-keun;Chen Xinglong;Choi In-ho |
| 分类号 |
H01L21/311;H01L21/02;H01L21/3065 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching method using plasma, the method comprising:
generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS; and etching an etching object by supplying water (H2O) and the plasma to a process chamber; wherein the water (H2O) is supplied to the process chamber without being supplied to the at least one RPS. |
| 地址 |
Suwon-si KR |
