| 发明名称 |
GATE INDUCED DRAIN LEAKAGE REDUCTION |
| 摘要 |
Exemplary embodiments of the present disclosure are related to reducing, and possibly preventing, gate inducted drain leakage for a switch. A device may comprise an amplifier and at least one transistor coupled in a feedback path of the amplifier. The device may also comprise a circuit configured to modulate a gate of the at least one transistor with a signal comprising a scaled-down and shifted version of a signal at a drain of the at least one transistor. |
| 申请公布号 |
US2017063306(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201514939894 |
申请日期 |
2015.11.12 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Abdelfattah Khaled |
| 分类号 |
H03F1/02;H03F3/21;H03F3/193 |
主分类号 |
H03F1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
an amplifier; at least one transistor coupled in a feedback path of the amplifier; and a circuit configured to modulate a gate of the at least one transistor with a signal comprising a scaled-down and shifted version of a signal at a drain of the at least one transistor. |
| 地址 |
San Diego CA US |
