发明名称 PRODUCTION METHOD FOR COMPOSITION CONTAINING 1,2-DICHLORO-3,3,3-TRIFLUOROPROPENE (HCFO-1223xd) AND/OR 1,1,2-TRICHLORO-3,3,3-TRIFLUOROPROPENE (CFO-1213xa)
摘要 The present invention provides a method that produces a composition containing 1223xd and/or 1213xa by a gas-phase reaction, and that achieves production efficiency higher than known methods. The present invention provides a method for producing a composition containing at least one fluorine-containing olefin selected from 1,2-dichloro-3,3,3-trifluoropropene (HCFO-1223xd) and 1,1,2-trichloro-3,3,3-trifluoropropene (CFO-1213xa), the method comprising subjecting at least one starting compound selected from a chlorine-containing alkane represented by Formula (1-1): CF3CHXCHX2, wherein each X is independently H or Cl, with the proviso that at least one X represents Cl, and a chlorine-containing alkene represented by Formula (1-2): CF3CX═CX2, wherein each X is independently H or Cl, with the proviso that at least one X represents Cl, to a gas-phase oxychlorination reaction in a temperature range of 380° C. or lower in the presence of oxidative gas and hydrogen chloride gas.
申请公布号 US2017057891(A1) 申请公布日期 2017.03.02
申请号 US201515307956 申请日期 2015.05.14
申请人 DAIKIN INDUSTRIES, LTD. 发明人 KARUBE Daisuke;OHKUBO Shun;TAKAKUWA Tatsuya
分类号 C07C17/06;C07C17/383 主分类号 C07C17/06
代理机构 代理人
主权项 1. A method for producing a composition containing at least one fluorine-containing olefin selected from 1,2-dichloro-3,3,3-trifluoropropene (HCFO-1223xd) and 1,1,2-trichloro-3,3,3-trifluoropropene (CFO-1213xa), the method comprising subjecting at least one starting compound selected from a chlorine-containing alkane represented by Formula (1-1): CF3CHXCHX2, wherein each X is independently H or Cl, with the proviso that at least one X represents Cl, and a chlorine-containing alkene represented by Formula (1-2): CF3CX═CX2, wherein each X is independently H or Cl, with the proviso that at least one X represents Cl,to a gas-phase oxychlorination reaction in a temperature range of 380° C. or lower in the presence of oxidative gas and hydrogen chloride gas.
地址 Osaka JP