发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND LOAD DRIVING DEVICE |
摘要 |
There is a drawback that current density cannot be uniform across transistors disposed and spread two-dimensionally. In the present invention, on a transistor layer on which multiple transistors 1 each having a drain, a source, and a gate are disposed in parallel, a metal wiring layer 10 serving as an input-side wiring layer to which the drain of each transistor 1 is connected and a metal wiring layer 11 serving as an output-side wiring layer to which the source of each transistor is connected are juxtaposed to each other. Further, a plurality of through holes are provided which connect the metal wiring layer 10 serving as the input-side wiring layer to the drain of each transistor, and connect the metal wiring layer 11 serving as the output-side wiring layer to the source of each transistor. The values of the resistances of the through holes 2, 3 are changed along the direction in which the input-side wiring layer and the output-side wiring layer are arranged, so that the current density of the transistors disposed and spread two-dimensionally can be made uniform. |
申请公布号 |
WO2017033642(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
WO2016JP71658 |
申请日期 |
2016.07.25 |
申请人 |
HITACHI AUTOMOTIVE SYSTEMS, LTD. |
发明人 |
IKEGAYA Katsumi;OSHIMA Takayuki |
分类号 |
H01L21/336;H01L21/28;H01L21/3205;H01L21/768;H01L23/522;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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