| 发明名称 |
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, A memory device includes a pillar, a first wiring, a second wiring, an insulating film provided between the first wiring and the second wiring, a first layer provided between the first wiring and the pillar in the second direction and including a first metal oxide containing a first metal and oxygen, a second layer provided between the second wiring and the pillar in the second direction and including the first metal oxide containing the first metal and oxygen, and an intermediate film provided between the pillar and the first layer and between the pillar and the second layer in the second direction and including a second metal oxide containing the first metal and oxygen. Concentration of oxygen contained in the first metal oxide is lower than concentration of oxygen contained in the second metal oxide. |
| 申请公布号 |
US2017062713(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615013088 |
申请日期 |
2016.02.02 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
TAKAGI Takeshi;YAMAGUCHI Takeshi;YAMATO Masaki;ODE Hiroyuki;TANAKA Toshiharu |
| 分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a pillar extending in a first direction; a first wiring apart from the pillar in a second direction crossing the first direction, the first wiring extending in a third direction crossing the first direction and the second direction; a second wiring apart from the first wiring in the first direction and extending in the third direction; an insulating film provided between the first wiring and the second wiring; a first layer provided between the first wiring and the pillar in the second direction and including a first metal oxide containing a first metal and oxygen; a second layer provided between the second wiring and the pillar in the second direction and including the first metal oxide containing the first metal and oxygen; and an intermediate film provided between the pillar and the first layer in the second direction and between the pillar and the second layer in the second direction, intermediate film including a second metal oxide containing the first metal and oxygen, a concentration of oxygen contained in the first metal oxide being lower than a concentration of oxygen contained in the second metal oxide. |
| 地址 |
Minato-ku JP |
