| 发明名称 |
METHOD OF MANUFACTURING LIGHT EMITTING DIODE |
| 摘要 |
A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed. |
| 申请公布号 |
US2017062675(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615219454 |
申请日期 |
2016.07.26 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lim Jin-young;Sakong Tan;Sim Eun-deok;Yoon Suk-ho;Lee Jeong-wook |
| 分类号 |
H01L33/58;H01L33/00;H01L33/32;H01L33/16;H01L33/44 |
主分类号 |
H01L33/58 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a light emitting diode (LED), the method comprising:
forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a photomask pattern on the second material layer; performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask; removing the photomask pattern; and forming a plurality of isolated structures, by performing a second etching on a remaining portion of the first material layer until a top surface of the substrate is exposed. |
| 地址 |
Suwon-si KR |
