发明名称 LED ELEMENT WITH PROTECTING LAYER
摘要 The present disclosure provides a light emitting diode (LED) element which includes a semiconductor layer, a plurality of electrodes, a plurality of microstructures, and a first protecting layer. The semiconductor layer has a light outputting surface. The electrodes are formed on the semiconductor layer and located opposite to the light outputting surface. The microstructures are formed on the light outputting surface. The first protecting layer covers the light outputting surface and fills between the microstructures, and the first protecting layer is transparent.
申请公布号 US2017062656(A1) 申请公布日期 2017.03.02
申请号 US201514919958 申请日期 2015.10.22
申请人 ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 HUNG TZU-CHIEN;LIEN YA-CHI
分类号 H01L33/20;H01L33/38;H01L33/58;H01L33/50;H01L33/54;H01L33/56 主分类号 H01L33/20
代理机构 代理人
主权项 1. A light emitting diode (LED) element, comprising: a semiconductor layer, the semiconductor layer comprising a light outputting surface; a plurality of electrodes formed on the semiconductor layer and in direct contact with a surface of the semiconductor layer opposite to the light outputting surface, the electrodes exposing out from the LED element; a plurality of microstructures formed on the light outputting surface; and a first protecting layer, the first protecting layer covering the light outputting surface and encapsulating the microstructures, wherein the first protecting layer being transparent.
地址 Hsinchu Hsien 303 TW