发明名称 INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL
摘要 A multijunction solar cell which includes: an upper first solar subcell having a first band gap; a second solar subcell adjacent to said upper first solar subcell and having a second band gap smaller than said first band gap; a third solar subcell adjacent to said second solar subcell and having a third band gap smaller than said second band gap; a graded interlayer adjacent to said third solar subcell, said graded interlayer having a fourth band gap greater than said third band gap; and at least a fourth solar subcell adjacent to said graded interlayer, said fourth solar subcell having a fifth band gap smaller than said third band gap such that said lower fourth solar subcell is lattice mismatched with respect to said third solar subcell.
申请公布号 US2017062642(A1) 申请公布日期 2017.03.02
申请号 US201615352941 申请日期 2016.11.16
申请人 SolAero Technologies Corp. 发明人 Pantha Bed;Stan Mark;Derkacs Daniel
分类号 H01L31/0725;H01L31/054;H01L31/18;H01L31/0735 主分类号 H01L31/0725
代理机构 代理人
主权项 1. A multijunction solar cell comprising: an upper first solar subcell having a first band gap in the range of 1.92 to 2.2 eV; a second solar subcell adjacent to said first solar subcell and having a second band gap in the range of 1.65 to 1.78 eV; a third solar subcell adjacent to said second solar subcell and having a third band gap in the range of 1.40 to 1.50 eV; a first graded interlayer adjacent to said third solar subcell; said first graded interlayer having a fourth band gap greater than said third band gap; and a fourth solar subcell adjacent to said first graded interlayer, said fourth subcell having a fifth band gap in the range of 1.05 to 1.15 eV such that said fourth subcell is lattice mismatched with respect to said third subcell; a second graded interlayer adjacent to said fourth solar subcell; said second graded interlayer having a sixth band gap greater than said fifth band gap; and a lower fifth solar subcell adjacent to said second graded interlayer, said lower fifth subcell having a seventh band gap in the range of 0.8 to 0.9 eV such that said fourth subcell is lattice mismatched with respect to said fourth subcell; wherein the first graded interlayer is compositionally graded to lattice match the third solar subcell on one side and the lower fourth solar subcell on the other side, and is composed of (InxGa1-x)yAl1-yAs with 0<x<1, 0<y<1, and x and y selected such that the band gap remains at a constant value in the range of 1.42 to 1.60 eV throughout its thickness; and wherein the second graded interlayer is compositionally graded to lattice match the fourth solar subcell on one side and the lower fifth solar subcell on the other side, and is composed of (InxGa1-x)yAl1-yAs with 0<x<1, 0<y<1, and x and y selected such that the band gap remains at a constant value in the range of 1.2 eV to 1.6 eV throughout its thickness.
地址 Albuquerque NM US