| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating semiconductor device includes the steps of: providing a substrate having at least one fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion; removing part of the bottom portion of the fin-shaped structure; forming an epitaxial layer on the substrate to surround the bottom portion of the fin-shaped structure; transforming the bottom portion of the fin-shaped structure into the epitaxial layer; and removing part of the epitaxial layer. |
| 申请公布号 |
US2017062430(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615350113 |
申请日期 |
2016.11.14 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lee Hao-Ming |
| 分类号 |
H01L27/092;H01L29/06;H01L21/762;H01L21/8238;H01L21/3105;H01L21/02;H01L21/324;H01L29/165;H01L29/66;H01L21/311 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having at least one fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion; removing part of the bottom portion of the fin-shaped structure; forming an epitaxial layer on the substrate to surround the bottom portion of the fin-shaped structure; transforming the bottom portion of the fin-shaped structure into the epitaxial layer; and removing part of the epitaxial layer. |
| 地址 |
Hsin-Chu City TW |
