BURIED INTERCONNECT FOR SEMICONDUCTOR CIRCUITS

摘要

A semiconductor circuit comprises a Front End of Line (FEOL) comprising a plurality of transistors, each of which having a source region, a drain region and a gate region arranged between the source region and the drain region and comprising a gate electrode. The semiconductor circuit also comprises a buried interconnect that is arranged in the FEOL and electrically connected to the gate region from below through a bottom contact portion of the gate electrode. By using a buried interconnect the routing of the circuit may be facilitated.

主权项

1. A semiconductor circuit, comprising:
a front-end-of-line comprising a plurality of transistors, each transistor comprising a source region, a drain region, and a gate region, wherein the gate region is situated between the source region and the drain region and comprises a gate electrode; and a first buried interconnect situated in the front end of line and electrically connected to the gate region from below through a bottom contact portion of the gate electrode.