| 发明名称 |
IMPLEMENTING ENHANCED MAGNETIC MEMORY CELL |
| 摘要 |
A magnetic memory cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell includes a first conductor M1, and a second conductor M2 and a programmable area using unpatterned programmable magnetic media. At least one of the conductors M1, M2 is formed of a magnetic material, and the conductor M2 is more conductive than conductor M1. Steering of current is provided for programming the magnetic memory cell. |
| 申请公布号 |
US2017062034(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201514834743 |
申请日期 |
2015.08.25 |
| 申请人 |
HGST Netherlands B.V. |
发明人 |
Bandic Zvonimir Z.;Childress Jeffery Robinson;Franca-Neto Luiz M.;Katine Jordan Asher;Robertson Neil Leslie |
| 分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory cell comprising:
a first conductor M1, a second conductor M2; said first conductor M1 being formed of a magnetic material, and said second conductor M2 being more electrically conductive than said conductor M1; a programmable area of said magnetic memory cell using unpatterned programmable magnetic media; and said magnetic memory cell being programmed by steering of current toward said programmable area. |
| 地址 |
Amsterdam NL |
