OXIDE SEMICONDUCTOR TRANSISTOR USED AS PIXEL ELEMENT OF DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to an oxide semiconductor transistor used as a pixel element of a display device and a method of manufacturing the same. An oxide semiconductor transistor according to the present invention comprises a substrate; a first gate electrode on the substrate; a first gate insulating film on the first gate electrode; an oxide semiconductor on the first gate insulating film; a source electrode and a drain electrode on the oxide semiconductor; a second gate insulating film on the oxide semiconductor; and a second gate electrode on the second gate insulating film, wherein the first gate electrode or the second gate electrode is formed to have a width smaller than a width between the source electrode and the drain electrode.