RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE ELEMENT AND METHOD OF FABRICATING SAME

摘要

A method of fabrication of a device includes forming a first electrode (158) and a second electrode (162). The method further includes forming a resistive material (160) between the first electrode and the second electrode to form a resistance-based storage element (104) of a resistive random access memory (RRAM) device.