发明名称 |
CRYSTAL ORIENTATION LAYER LAMINATED STRUCTURE, ELECTRONIC MEMORY AND METHOD FOR MANUFACTURING CRYSTAL ORIENTATION LAYER LAMINATED STRUCTURE |
摘要 |
A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation |
申请公布号 |
US2017062711(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615349074 |
申请日期 |
2016.11.11 |
申请人 |
National Institute of Advanced Industrial Science and Technology |
发明人 |
Saito Yuta;Tominaga Junji;Kondo Reiko |
分类号 |
H01L45/00;C23C14/34 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A crystal orientation layer laminated structure comprising:
a substrate; an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more; and a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation. |
地址 |
Tokyo JP |