| 发明名称 |
IMPLEMENTING DEPOSITION GROWTH METHOD FOR MAGNETIC MEMORY |
| 摘要 |
A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials. |
| 申请公布号 |
US2017062710(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615197847 |
申请日期 |
2016.06.30 |
| 申请人 |
HGST Netherlands B.V. |
发明人 |
Franca-Neto Luiz M.;Ruiz Ricardo |
| 分类号 |
H01L43/12;G11C11/16;H01L43/10;H01L27/22;H01L43/08;H01L43/02 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for implementing a magnetic memory array comprising:
forming a plurality of magnetic pillar memory cells includes a first conductor M1 being formed of a magnetic material, and said second conductor M2 being more electrically conductive than said conductor M1 including growing said second conductor M2, coating said second conductor M2 with a non-magnetic spacer layer, growing said first magnetic conductor M1 over said coated second conductor M2; depositing an oxide barrier over said grown first magnetic conductor M1 forming magnetic pillar memory cells; and depositing an interlayer dielectric (IDL) stack of word planes separated by a respective IDL. |
| 地址 |
Amsterdam NL |
