TILTED SYNTHETIC ANTIFERROMAGNET POLARIZER/REFERENCE LAYER FOR STT-MRAM BITS

摘要

Embodiments disclosed herein generally relate to a multilayer magnetic device, and specifically to a spin-torque transfer magnetoresistive random access memory (STT-MRAM) device which provides for a reduction in the amount of current required for switching individual bits. As such, a polarizing reference layer consisting of a synthetic antiferromagnet (SAF) structure with an in-plane magnetized ferromagnet film indirectly exchange coupled to a magnetic film with perpendicular magnetic anisotropy (PMA) is disclosed. By tuning the exchange coupling strength and the PMA, the layers of the SAF may both be canted such that either may be used as a tilted polarizer for either an in-plane free layer or a free layer with PMA.

主权项

1. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
an in-plane ferromagnet layer;a nonmagnetic metal layer disposed on the in-plane ferromagnet layer; anda perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein both the in-plane ferromagnet layer and the perpendicular magnetic anisotropy ferromagnet layer are each tilted away from respective equilibrium axes, and wherein the perpendicular magnetic anisotropy ferromagnet layer is magnetized out-of-plane.