SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Performances of a semiconductor device are improved. The semiconductor device has: a gate electrode formed on an SOI layer of an SOI substrate via a gate insulating film having a charge storage film therein; an n-type semiconductor region and a p-type semiconductor region respectively formed on SOI layers on both sides of the gate electrode. A memory cell MC serving as a non-volatile memory cell is formed of the gate insulating film, the gate electrode, the n-type semiconductor region and the p-type semiconductor region.

主权项

1. A semiconductor device comprising:
a base body; an insulating layer formed on the base body; a semiconductor layer formed on the insulating layer; a gate insulating film having a charge storage portion formed therein, formed on the semiconductor layer; a gate electrode formed on the gate insulating film; a first semiconductor region of a first conductive type formed in the semiconductor layer in a portion located on a first side of the gate electrode when seen in a plan view; and a second semiconductor region of a second conductive type different from the first conductive type, formed in the semiconductor layer in a portion located on a side opposite to the first side of the gate electrode when seen in a plan view, wherein a non-volatile memory cell is formed of the gate insulating film, the gate electrode, the first semiconductor region and the second semiconductor region.