THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor array panel according to an exemplary embodiment of the present invention includes a substrate and a gate electrode disposed on the substrate. A gate insulating layer is disposed on the substrate and covers the gate electrode. A semiconductor layer is disposed on the gate insulating layer and includes a channel region, a source region, and a drain region. The source and drain regions are separated from each other by the channel region. An etch stopper is disposed on the semiconductor layer. A passivation layer is disposed on the semiconductor layer and covers the etch stopper. A source electrode and a drain electrode are disposed on the passivation layer and are respectively connected to the source region and the drain region. The passivation layer includes a first sub-passivation layer including aluminum oxide (AlOx).

主权项

1. A thin film transistor array panel comprising:
a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and including a channel region, a source region, and drain region, the source and drain regions being separated from each other by the channel region; an etch stopper disposed on the semiconductor layer; a passivation layer disposed on the semiconductor layer and covering the etch stopper; and a source electrode and a drain electrode which are disposed on the passivation layer and respectively connected to the source region and the drain region, wherein the passivation layer includes aluminum oxide (AlOx).