| 发明名称 |
Substrate Resistor and Method of Making Same |
| 摘要 |
A semiconductor structure can include a resistor on a substrate formed simultaneously with other devices, such as transistors. A diffusion barrier layer formed on a substrate is patterned to form a resistor and barrier layers under a transistor gate. A filler material, a first connector, and a second connector are formed on the resistor at the same manner and time as the gate of the transistor. The filler material is removed to form a resistor on a substrate. |
| 申请公布号 |
US2017062578(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615351139 |
申请日期 |
2016.11.14 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Hua Feng;Wang Shu-Hui;Chiang Mu-Chi |
| 分类号 |
H01L29/43;H01L29/49;H01L29/06;H01L27/06;H01L29/161;H01L29/16;H01L29/165;H01L29/78;H01L49/02;H01L29/08 |
主分类号 |
H01L29/43 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
an isolation region in a substrate; a resistor on the isolation region; a first connector on the resistor; a second connector on the resistor; and a spacer on the resistor, wherein the spacer is laterally disposed between the first connector and the second connector. |
| 地址 |
Hsin-Chu TW |
