发明名称 |
RADIATION DETECTOR FABRICATION |
摘要 |
The present approach relates to the fabrication of radiation detectors. In certain embodiments, additive manufacture techniques, such as 3D metallic printing techniques are employed to fabricate one or more parts of a detector. In an example of one such printing embodiment, amorphous silicon may be initially disposed onto a substrate and a laser may be employed to melt some or all of the amorphous silicon so as to form crystalline silicon circuitry of a light imager panel. Such printing techniques may also be employed to fabricate other aspects of a radiation detector, such as a scintillator layer. |
申请公布号 |
US2017062510(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615351690 |
申请日期 |
2016.11.15 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
Liu James Zhengshe |
分类号 |
H01L27/146;G01T1/20;G01T1/24 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A light imager panel of a radiation detector, comprising:
a non-silicon substrate; and a plurality of pixels printed on the non-silicon substrate, each pixel comprising crystalline silicon (c-Si) circuitry corresponding to at least one field effect transistor, at least one photodiode, and at least one charge amplifier. |
地址 |
Schenectady NY US |