| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a semiconductor device includes an underlying metal film and a metal film. The underlying metal film is a tantalum-aluminum film having an aluminum content of more than 50 atomic % and less than 85 atomic %, a tungsten-zirconium film having a zirconium content of less than 40 atomic %, a tungsten-titanium film having a titanium content of less than 80 atomic %, or a tungsten film. The metal film is provided on the underlying metal film and in contact with the underlying metal film. The metal film contains at least one of tungsten and molybdenum, and has a main orientation of (100) or (111). |
| 申请公布号 |
US2017062466(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615048120 |
申请日期 |
2016.02.19 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ISHIZAKI TAKESHI;SAKATA ATSUKO;WAKATSUKI SATOSHI |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an underlying metal film being a tantalum-aluminum film having an aluminum content of more than 50 atomic % and less than 85 atomic %, a tungsten-zirconium film having a zirconium content of less than 40 atomic %, a tungsten-titanium film having a titanium content of less than 80 atomic %, or a tungsten film; and a metal film provided on the underlying metal film and in contact with the underlying metal film, the metal film containing at least one of tungsten and molybdenum, and having a main orientation of (100) or (111). |
| 地址 |
TOKYO JP |
