| 发明名称 |
SEMICONDUCTOR DEVICES INCLUDING NANOWIRE CAPACITORS AND FABRICATING METHODS THEREOF |
| 摘要 |
Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film. |
| 申请公布号 |
US2017062435(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615162912 |
申请日期 |
2016.05.24 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
IM Dong-Hyun;LIM Han-Jin;MA Jin-Won;LEE Kong-Soo;IM Ki-Vin |
| 分类号 |
H01L27/108;H01L29/06;H01L23/532;H01L23/522;H01L23/535;H01L23/528 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate, a metal layer on the substrate; a seed layer on the metal layer; a nanowire comprising a pillar shape on the seed layer; a dielectric film conformally covering the nanowire; and an electrode film on the dielectric film. |
| 地址 |
Suwon-si KR |
