发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS AND SEMICONDUCTOR COMPONENT |
摘要 |
A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided. |
申请公布号 |
US2017062351(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201515119376 |
申请日期 |
2015.02.17 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
VON MALM Norwin;PFEUFFER Alexander F.;VARGHESE Tansen;KREUTER Philipp |
分类号 |
H01L23/544;H01L31/0352;H01L33/32;H01L31/18;H01L33/30;H01L33/42;H01L31/0224;H01L33/00;H01L33/06;H01L31/0304 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
1. A method for producing a plurality of semiconductor components, comprising the steps of:
a) providing a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region, arranged between the first semiconductor layer and the second semiconductor layer provided for generating and/or receiving radiation; b) forming a first connection layer on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs through the semiconductor layer sequence; d) forming a conducting layer in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) singulating into the plurality of semiconductor components, wherein a semiconductor body having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. |
地址 |
Regensburg DE |