发明名称 Integrated Circuit Structures Comprising Conductive Vias And Methods Of Forming Conductive Vias
摘要 A method of forming conductive vias comprises forming a first via opening and a second via opening within a substrate. First conductive material of a first conductivity is formed into the first and second via openings. The first conductive material lines sidewalls and a base of the second via opening to less-than-fill the second via opening. Second conductive material is formed into the second via opening over the first conductive material in the second via opening. The second conductive material is of a second conductivity that is greater than the first conductivity. All conductive material within the first via opening forms a first conductive via defining a first maximum conductance elevationally through the first conductive via and all conductive material within the second via opening forms a second conductive via defining a second maximum conductance elevationally through the second conductive via that is greater than said first maximum conductance. Integrated circuit structure comprising conductive vias independent of method of manufacture are disclosed.
申请公布号 US2017062338(A1) 申请公布日期 2017.03.02
申请号 US201514838738 申请日期 2015.08.28
申请人 Micron Technology, Inc. 发明人 Liu Zengtao T.
分类号 H01L23/528;H01L23/522;H01L27/24;H01L21/768 主分类号 H01L23/528
代理机构 代理人
主权项 1. A method of forming conductive vias, comprising: forming a first via opening and a second via opening within a substrate; forming first conductive material of a first conductivity into the first and second via openings, the first conductive material lining sidewalls and a base of the second via opening to less-than-fill the second via opening; forming second conductive material into the second via opening over the first conductive material in the second via opening, the second conductive material being of a second conductivity that is greater than the first conductivity; and all conductive material within the first via opening forming a first conductive via defining a first maximum conductance elevationally through the first conductive via and all conductive material within the second via opening forming a second conductive via defining a second maximum conductance elevationally through the second conductive via that is greater than said first maximum conductance.
地址 Boise ID US