发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
A processing fluid can be discharged according to a discharge type for a process involved, without a discharge defect. A substrate processing apparatus includes a nozzle and a pipeline. The nozzle is configured to discharge the processing fluid toward a substrate, and the processing fluid is supplied to the nozzle through the pipeline. The pipeline has a three-layer structure having a first layer, a second layer and a third layer in this sequence from an inner side thereof. Further, a leading end portion of the first layer and a leading end portion of the third layer are bonded to the nozzle, and the leading end portion of the first layer is located at a position which is not protruded more than a leading end portion of the second layer with respect to a discharging direction of the processing fluid. |
申请公布号 |
US2017059996(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615251072 |
申请日期 |
2016.08.30 |
申请人 |
Tokyo Electron Limited |
发明人 |
Higashijima Jiro;Ogata Nobuhiro |
分类号 |
G03F7/42 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus, comprising:
a nozzle configured to discharge a processing fluid toward a substrate; and a pipeline through which the processing fluid is supplied to the nozzle, wherein the pipeline has a three-layer structure having a first layer, a second layer and a third layer in this sequence from an inner side thereof, and a leading end portion of the first layer and a leading end portion of the third layer are bonded to the nozzle, and the leading end portion of the first layer is located at a position which is not protruded more than a leading end portion of the second layer with respect to a discharging direction of the processing fluid. |
地址 |
Tokyo JP |