发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 A processing fluid can be discharged according to a discharge type for a process involved, without a discharge defect. A substrate processing apparatus includes a nozzle and a pipeline. The nozzle is configured to discharge the processing fluid toward a substrate, and the processing fluid is supplied to the nozzle through the pipeline. The pipeline has a three-layer structure having a first layer, a second layer and a third layer in this sequence from an inner side thereof. Further, a leading end portion of the first layer and a leading end portion of the third layer are bonded to the nozzle, and the leading end portion of the first layer is located at a position which is not protruded more than a leading end portion of the second layer with respect to a discharging direction of the processing fluid.
申请公布号 US2017059996(A1) 申请公布日期 2017.03.02
申请号 US201615251072 申请日期 2016.08.30
申请人 Tokyo Electron Limited 发明人 Higashijima Jiro;Ogata Nobuhiro
分类号 G03F7/42 主分类号 G03F7/42
代理机构 代理人
主权项 1. A substrate processing apparatus, comprising: a nozzle configured to discharge a processing fluid toward a substrate; and a pipeline through which the processing fluid is supplied to the nozzle, wherein the pipeline has a three-layer structure having a first layer, a second layer and a third layer in this sequence from an inner side thereof, and a leading end portion of the first layer and a leading end portion of the third layer are bonded to the nozzle, and the leading end portion of the first layer is located at a position which is not protruded more than a leading end portion of the second layer with respect to a discharging direction of the processing fluid.
地址 Tokyo JP