| 发明名称 |
HIGH TEMPERATURE THERMAL ALD SILICON NITRIDE FILMS |
| 摘要 |
Methods for the deposition of SiN films comprising sequential exposure of a substrate surface to a silicon halide precursor at a temperature greater than or equal to about 600°C and a nitrogen-containing reactant. |
| 申请公布号 |
WO2017034855(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
WO2016US47150 |
申请日期 |
2016.08.16 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LU, Xinliang;LEI, Pingyan;KAO, Chien-Teh;BALSEANU, Mihaela;XIA, Li-Qun;SRIRAM, Mandyam |
| 分类号 |
H01L21/02;H01L21/205;H01L21/285;H01L21/324 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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