发明名称 |
THROUGH VIA STRUCTURE FOR STEP COVERAGE IMPROVEMENT |
摘要 |
A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole. |
申请公布号 |
US2017062343(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201514839934 |
申请日期 |
2015.08.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
FANG Li-Yen;TSAO Jung-Chih;LIANG Yao-Hsiang;LIN Yu-Ku |
分类号 |
H01L23/532;H01L23/528;H01L21/768;H01L23/535 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |