发明名称 ULTRAVIOLET DETECTION SYSTEM AND METHOD
摘要 An ultraviolet detection system and method comprises a Bluetooth MCU control unit, a Bluetooth antenna impedance matching unit and an ultraviolet detection unit. A sensor is a silicon product, which is formed by SOI technology, and the sensor can test the current UVI accurately and quickly, such that the ultraviolet detection system can provide accurate advice to customers to avoid being sunburned. The Bluetooth MCU is a low power consumption Bluetooth chip.
申请公布号 US2017064493(A1) 申请公布日期 2017.03.02
申请号 US201615013943 申请日期 2016.02.02
申请人 Shenzhen Hali-Power Industrial Co., Ltd. 发明人 ZHU Xiaomin
分类号 H04W4/00;G01J1/42 主分类号 H04W4/00
代理机构 代理人
主权项 1. an ultraviolet detection system, comprising, a Bluetooth MCU control unit, a Bluetooth antenna impedance matching unit, and an ultraviolet detection unit having an ultraviolet sensor, the Bluetooth antenna impedance matching unit including an IC matching circuit and a terminal matching circuit, the Bluetooth MCU control unit being used to do analog to digital (AD) testing, LED controlling, and antenna impedance matching; wherein exposure of the ultraviolet detection unit being to light, an ultraviolet photoelectric diode, composed of a top silicon and located inside the ultraviolet detection unit, producing a current corresponding to radiation intensity of ultraviolet radiation of the light, wherein current of an operational amplifier of the ultraviolet detection unit forms an output voltage corresponding to the current, the output voltage is transmitted to the Bluetooth MCU control unit, and the Bluetooth MCU control unit samples electrical signals, the Bluetooth MCU control unit is used to do AD sampling and testing, receiving and sending data signal, logic controlling, the Bluetooth antenna impedance matching unit is matched with the Bluetooth MCU control unit, and partly matched with an on board antenna of the Bluetooth antenna impedance matching unit, wherein the ultraviolet detection unit is a silicon product formed by an SOI technology, the SOI technology is a buried oxide layer being sandwiched between a top silicon layer and a substrate.
地址 Shenzhen CN