BACK-SIDE-EMITTING VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) WAFER BONDED TO A HEAT-DISSIPATION WAFER, DEVICES AND METHODS

摘要

A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die.

主权项

1. A wafer-to-wafer bonded arrangement comprising:
a highly thermally-conductive (HTC) wafer, the HTC wafer comprising a non-native substrate; and a vertical cavity surface emitting laser (VCSEL) wafer having a front side and a back side, the VCSEL wafer comprising:
an epitaxial (epi) structure having a first side and a second side, the epi structure comprising a first distributed Bragg reflector (DBR) adjacent the second side of the epi structure, a second DBR adjacent the first side of the epi structure, and one or more layers comprising a quantum well (QW) region disposed in between the first DBR and the second DBR, the first DBR having a first electrical conductivity type and the second DBR having a second electrical conductivity type that is different from the first electrical conductivity type; anda first contact metal layer disposed on the front side of the VCSEL wafer and in contact with the first DBR, the first contact metal layer being bonded to a top surface of the HTC wafer, wherein the VCSEL wafer has a plurality of first trenches formed therein that pass through the first contact metal layer, through the second side of the epi structure and extend a distance into the epi structure without passing through the epi structure.