SEMICONDUCTOR CELL

摘要

A semiconductor cell includes a substrate; a buffer structure disposed on the substrate; a channel layer having a band gap, and including a first portion on the buffer structure and a first protrusion which is disposed on the first portion and has a first top surface and a first inclined surface connecting to the first top surface; a barrier having a band gap greater than the band gap of the channel layer, disposed on the channel layer, and including a second portion disposed on the first portion, and a second protrusion covering the first top surface of the first protrusion and having a second top surface and a second inclined surface connecting to the second top surface and parallel to the first inclined surface; a first electrode disposed on the second protrusion; and a second electrode disposed on the second portion of the barrier and separated from the first electrode.

主权项

1. A semiconductor cell comprising:
a substrate; a buffer structure disposed on the substrate; a channel layer having a band gap, and comprising a first portion and a first protrusion wherein the first portion is disposed on the buffer structure, and the first protrusion is disposed on the first portion and has a first top surface and a first inclined surface connecting to the first top surface; a barrier having a band gap greater than the band gap of the channel layer, disposed on the channel layer, and comprising a second portion and a second protrusion wherein the second portion is disposed on the first portion, the second protrusion covers the first top surface of the first protrusion and has a second top surface and a second inclined surface connecting to the second top surface, and the second inclined surface is parallel to the first inclined surface; a first electrode disposed on the second protrusion; and a second electrode disposed on the second portion of the barrier and separated from the first electrode.