| 发明名称 |
ELECTRICAL GATE-TO-SOURCE/DRAIN CONNECTION |
| 摘要 |
A method of manufacturing a semiconductor device is provided including forming a gate electrode layer over a semiconductor substrate, forming a sidewall spacer at a sidewall of the gate electrode layer, forming a raised source/drain region over the semiconductor substrate and adjacent to the sidewall spacer, removing a portion of the sidewall spacer, thereby exposing a portion of the sidewall of the gate electrode layer, and forming an electrically conductive layer electrically connecting the exposed portion of the sidewall of the gate electrode layer and the source/drain region. |
| 申请公布号 |
US2017062438(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615146979 |
申请日期 |
2016.05.05 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Moll Hans-Peter;Baars Peter |
| 分类号 |
H01L27/11;H01L29/417;H01L29/49;H01L29/45;H01L29/06;H01L27/12;H01L29/08;H01L29/66 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a gate electrode layer over a semiconductor substrate; forming a sidewall spacer at a sidewall of said gate electrode layer; forming a raised source/drain region over said semiconductor substrate and adjacent to said sidewall spacer; removing a portion of said sidewall spacer, thereby exposing a portion of said sidewall of said gate electrode layer; and forming an electrically conductive layer electrically connecting said exposed portion of said sidewall of said gate electrode layer and said source/drain region. |
| 地址 |
Grand Cayman KY |
