| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer. |
| 申请公布号 |
US2017062336(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615242788 |
申请日期 |
2016.08.22 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
TAKAHASHI Yukio;MATSUURA Hitoshi |
| 分类号 |
H01L23/525;H01L29/739;H01L27/02;H01L29/66;H01L29/06;H01L29/40 |
主分类号 |
H01L23/525 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer. |
| 地址 |
Tokyo JP |
