发明名称 Method for Soldering an Insulating Substrate onto a Carrier
摘要 A method for soldering an insulating substrate onto a substrate mounting portion of a carrier by a predefined solder is provided. The insulating substrate includes a dielectric insulation carrier, a top side, and a bottom side opposite to the top side. The method includes selecting the insulating substrate based on a criterion which indicates that the insulating substrate, if it has the solidus temperature of the solder, has a positive unevenness. The insulating substrate is soldered on the bottom side to the substrate mounting portion, such that, after the soldering, the solidified solder extends continuously from the bottom side of the insulating substrate as far as the substrate mounting portion. The top side of the insulating substrate is populated with at least one semiconductor chip.
申请公布号 US2017062241(A1) 申请公布日期 2017.03.02
申请号 US201615251058 申请日期 2016.08.30
申请人 Infineon Technologies AG 发明人 Rimbert-Riviere Charles;Deborde Jean-Laurent;Haller Martin;Sanetra Nils Alexander;Vartolomei Vasile
分类号 H01L21/48;B23K1/19;B23K1/00;H01L23/373;H01L23/00 主分类号 H01L21/48
代理机构 代理人
主权项 1. A method for soldering an insulating substrate onto a substrate mounting portion of a carrier by a predefined solder, wherein the insulating substrate comprises a dielectric insulation carrier, a top side, and a bottom side opposite to the top side, the method comprising: selecting the insulating substrate based on a criterion which indicates that the insulating substrate, if it has the solidus temperature of the solder, has a positive unevenness; soldering the insulating substrate on the bottom side to the substrate mounting portion, such that, after the soldering, the solidified solder extends continuously from the bottom side of the insulating substrate as far as the substrate mounting portion; and populating the top side of the insulating substrate with at least one semiconductor chip.
地址 Neubiberg DE