Method for Integrated Circuit Patterning

摘要

A method of patterning a substrate includes forming a hard mask layer over the substrate; forming a first material layer over the hard mask layer; and forming a trench in the first material layer. The method further includes treating the hard mask layer with an ion beam through the trench. An etching rate of a treated portion of the hard mask layer reduces with respect to an etching process while an etching rate of untreated portions of the hard mask layer remains substantially unchanged with respect to the etching process. After the treating of the hard mask layer, the method further includes removing the first material layer and removing the untreated portions of the hard mask layer with the etching process, thereby forming a hard mask over the substrate. The method further includes etching the substrate with the hard mask as an etch mask.

主权项

1. A method of patterning a substrate, the method comprising:
forming a hard mask layer over the substrate; forming a first material layer over the hard mask layer; forming a trench in the first material layer; treating the hard mask layer with an ion beam through the trench, wherein an etching rate of a treated portion of the hard mask layer reduces with respect to an etching process while an etching rate of untreated portions of the hard mask layer remains substantially unchanged with respect to the etching process; after the treating of the hard mask layer, removing the first material layer; removing the untreated portions of the hard mask layer with the etching process, thereby forming a hard mask over the substrate; and etching the substrate with the hard mask as an etch mask.