METHODS TO IMPROVE IN-FILM PARTICLE PERFORMANCE OF AMORPHOUS BORON-CARBON HARDMASK PROCESS IN PECVD SYSTEM

摘要

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

主权项

1. A method, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein; flowing a boron-containing gas mixture into the processing volume; stabilizing the pressure in the processing volume for a predefined RF-on delay time period; generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate; exposing the processing volume to a dry cleaning process; and depositing an amorphous boron season layer over at least one surface in the processing volume.