发明名称 |
CONTACT STRUCTURE AND EXTENSION FORMATION FOR III-V NFET |
摘要 |
FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions. |
申请公布号 |
US2017062215(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615350071 |
申请日期 |
2016.11.13 |
申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Reznicek Alexander |
分类号 |
H01L21/02;H01L29/267;H01L29/66;H01L29/08;H01L29/78;H01L29/20;H01L29/10 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |