| 主权项 |
1. A semiconductor manufacturing method using a semiconductor manufacturing apparatus comprising a reactor capable of accommodating a semiconductor substrate therein and allowing a gas used for film deposition on the semiconductor substrate to be introduced thereinto, a first plate-shaped part arranged in the reactor and comprising a plurality of first through holes, and a second plate-shaped part arranged in the reactor on a gas-downstream side of the first plate-shaped part to be opposed to the first plate-shaped part and comprising a plurality of second through holes, the method comprising:
setting a relative position between the first through holes and the second through holes to a first relative position corresponding to a target in-plane distribution of a film thickness of a first film; supplying a first gas comprising a component of the first film onto the semiconductor substrate in the reactor through the first through holes not closed with the second plate-shaped part at the first relative position, to form the first film on the semiconductor substrate; relatively moving the first plate-shaped part and the second plate-shaped part to change the relative position to a second relative position corresponding to a target in-plane distribution of a film thickness of a second film, the second relative position being different from the first relative position in number, a cross-sectional area, or positions of the first through holes overlapping with the second through holes; and supplying a second gas comprising a component of the second film onto the semiconductor substrate through the first through holes not closed with the second plate-shaped part at the second relative position, to laminate the second film on the first film. |
