MANUFACTURABLE MULTI-EMITTER LASER DIODE

摘要

A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

主权项

1. A multi-emitter laser diode device, the laser diode device comprising:
a carrier chip singulated from a carrier wafer, the carrier chip being characterized by a length and a width; wherein the width defines a first pitch; a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region; each of the epitaxial mesa dice regions arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions, each of the plurality of epitaxial mesa dice regions comprising epitaxial material; the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region; one or more laser diode stripe regions formed in the plurality of epitaxial mesa dice regions; and each of the laser diode stripe regions configured with a pair of facets wherein the first facet is configured on a first end of the stripe and second facet is configured on the second end of the stripe region to form a cavity region.