发明名称 |
PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC ELEMENT APPLIED DEVICE |
摘要 |
There is provided a piezoelectric element which includes a first electrode, a piezoelectric layer which is formed on the first electrode by using a solution method, and is formed from a compound oxide having a perovskite structure in which potassium, sodium, and niobium are provided, and a second electrode which is provided on the piezoelectric layer. A cross-sectional SEM image of the piezoelectric layer is captured at a magnification of 100,000. When evaluation is performed under a condition in which a measured value in a transverse direction is set to 1,273 nm, two or more voids are included in the piezoelectric layer, a difference between the maximum value and the minimum value among diameters of the voids to be largest in a film thickness direction is equal to or smaller than 14 nm, and the maximum value is equal to or smaller than 24 nm. |
申请公布号 |
US2017062693(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615139884 |
申请日期 |
2016.04.27 |
申请人 |
Seiko Epson Corporation |
发明人 |
SAKAI Tomohiro;SUMI Koji;ISSHIKI Tetsuya;TAKAHASHI Toshiaki;KOBAYASHI Tomokazu;KITADA Kazuya |
分类号 |
H01L41/04;H01L41/18;H01L41/08 |
主分类号 |
H01L41/04 |
代理机构 |
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代理人 |
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主权项 |
1. A piezoelectric element comprising:
a first electrode; a piezoelectric layer which is formed on the first electrode by using a solution method, and is formed from a compound oxide having a perovskite structure in which potassium, sodium, and niobium are provided; and a second electrode which is provided on the piezoelectric layer, wherein a cross-sectional SEM image of the piezoelectric layer is captured at a magnification of 100,000, and when evaluation is performed under a condition in which a measured value in a transverse direction is set to 1,273 nm, two or more voids are included in the piezoelectric layer, a difference between the maximum value and the minimum value among diameters of the voids to be largest in a film thickness direction is equal to or smaller than 14 nm, and the maximum value is equal to or smaller than 24 nm. |
地址 |
Tokyo JP |